TOSHIBA | Transistors - RF power FET and GaAs-FET

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Transistors - RF power FET and GaAs-FET (2)

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Order code:	EIB1213-2P
	Internally matched power FET Excelics EIB1213-2P
Conditions:	N (The product is brand new)
Type:	FET
Drain-source voltage (V_ds):	10 V
Gate-source voltage (V_gs) :	-5 V
Drain current (I_d):	850 mA
Gain:	8.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	12.75 GHz
Max. frequency :	13.25 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange

Internally matched power FET

Order code: EIB1213-2P
Excelics EIB1213-2P

Stock: 41 pcs

Price each

€100,70

Volume discounts

€91,69

10+

€83,74

(VAT tax not included)

Minimum: 1

Multiple: 1

Order code:	EIB1415-2P
	Internally matched power FET Excelics EIB1415-2P
Conditions:	N (The product is brand new)
Type:	FET
Drain-source voltage (V_ds):	10 V
Gate-source voltage (V_gs) :	-5 V
Drain current (I_d):	850 mA
Gain:	7.5 dB
Output power:	33 dBm
Power dissipation:	16 W
Min. frequency:	14.4 GHz
Max. frequency :	15.35 GHz
Internally matched:	Yes
Package:	metal-ceramic
Mounting :	flange